DOI QR코드

DOI QR Code

NiO-transparent Metal-oxide Semiconductor Photoelectric Devices

NiO 기반의 투명 금속 산화물 반도체 광전소자

  • Ban, Dong-Kyun (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Park, Wang-Hee (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Eun, Seong Wan (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Photoelectric and Energy Device Application Lab (PEDAL), Department of Electrical Engineering, Incheon National University)
  • 반동균 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 박왕희 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 은승완 (인천대학교 전기공학과 광전에너지소자연구실) ;
  • 김준동 (인천대학교 전기공학과 광전에너지소자연구실)
  • Received : 2016.04.07
  • Accepted : 2016.05.24
  • Published : 2016.06.01

Abstract

NiO serves as a window layer for Si photoelectric devices. Due to the wide energy bandgap of NiO, high optical transparency (over 80%) was achieved and applied for Si photoelectric devices. Due to the high the high mobility, the heterojunction device (Al/n-Si/$SiO_2$/p-NiO/ITO) provide ultimately fast photoresponses of rising time of $38.33{\mu}s$ and falling time of $39.25{\mu}s$, respectively. This functional NiO layer would provide benefits for high-performing photoelectric devices, including photodetectors and solar cells.

Acknowledgement

Supported by : Korea Institute of Energy Technology Evaluation and Planning

References

  1. A. Takagi, K. Nomura, H. Ohta, H. Yanagi, T. Kamiya, M. Hirano, and H. Hosono, Thin Solid Films, 438, 38 (2005). [DOI: http://dx.doi.org/10.1016/j.tsf.2004.11.223
  2. K. H. Kim, H. S. Kim, M. Patel, and J. D. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 28, 808 (2015).
  3. H. Kim, C. M. Gilmore, A. Pique, J. S. Horwitz, H. Mattoussi, H. Murata, Z. H. Kafafi, and D. B. Chrisey, J. Appl. Phys., 86, 6451 (1999). [DOI: http://dx.doi.org/10.1063/1.371708] https://doi.org/10.1063/1.371708
  4. T. Karasawa and Y. Miyata, Thin Solid Films, 223, 135 (1993). [DOI: http://dx.doi.org/10.1016/0040-6090(93)9073-A] https://doi.org/10.1016/0040-6090(93)90737-A
  5. S. Ishibashi, Y. Higuchi, Y. Ota, and K. Nakamura, J. Vac. Sci. Technol. A, 8 1403 (1990). [DOI: http://dx.doi.org/10.1116/1.576890] https://doi.org/10.1116/1.576890
  6. M. D. Kumar, H. K. Kim, and J. D. Kim, Sensors and Actuators A, 223, 290 (2015).
  7. C. Battaglia, S. M. de Nicolas, S. D. Wolf, X. Yin, M. Zheng, C. Ballif, and A. Javey, Applied Physics Letters, 104, 113902 (2014). [DOI: http://dx.doi.org/10.1063/1.4868880] https://doi.org/10.1063/1.4868880
  8. L. G. Gerling, S. Mahato, C. Voz, R. Alcubilla, and J. Puigdollers, Appl. Sci., 5, 695 (2015). [DOI: http://dx.doi.org/10.3390/app5040695] https://doi.org/10.3390/app5040695
  9. K. M. Kang, J. H. Yoon, Y. C. Park, and J. D. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 27, 276 (2014).
  10. Z. H. Wang, S. H. Lee, D. H. Kim, J. H. Kim, and J. K. Park, Solar Energy Materials and Solar Cells, 94, 1592 (2010).