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Analysis of Electron Transport Coefficients in Binary Mixtures of TEOS Gas with Kr, Xe, He and Ne Gases for Using in Plasma Assisted Thin-film Deposition

  • Tuan, Do Anh (Faculty of Electronics and Electrical Engineering, Hung Yen University of Technology and Education)
  • Received : 2015.06.24
  • Accepted : 2015.10.08
  • Published : 2016.03.01

Abstract

The electron transport coefficients in not only pure atoms and molecules but also in the binary gas mixtures are necessary, especially on understanding quantitatively plasma phenomena and ionized gases. Electron transport coefficients (electron drift velocity, density-normalized longitudinal diffusion coefficient, and density-normalized effective ionization coefficient) in binary mixtures of TEOS gas with buffer gases such as Kr, Xe, He, and Ne gases, therefore, was analyzed and calculated by a two-term approximation of the Boltzmann equation in the E/N range (ratio of the electric field E to the neutral number density N) of 0.1 - 1000 Td (1 Td = 10−17 V.cm2). These binary gas mixtures can be considered to use as the silicon sources in many industrial applications depending on mixture ratio and particular application of gas, especially on plasma assisted thin-film deposition.

Keywords

TEOS;thin-film;Electron transport coefficient;Plasma assisted thin-film deposition;Boltzmann equation

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