Dry Etching Properties of PAR (poly-arylate) Substrate for Flexible Display Application

플렉시블 디스플레이 응용을 위한 폴리아릴레이트 기판의 식각 특성

  • Hwanga, Jin-Ho (Department of Electric Energy Systems, Incheon Campus of Korea Polytechnics)
  • 황진호 (한국폴리텍대학교 전기에너지시스템학과)
  • Received : 2016.09.19
  • Accepted : 2016.11.19
  • Published : 2016.12.01


In this study, effects of ICP (inductively coupled plasma) treatment on PAR thin film have been investigated. A maximum etch rate of the PAR thin films and the selectivity of PAR to PR were obtained as 110 nm/minand 1.1 in the $CF_4/O_2$ (5:15 sccm) gas mixture. We present the surface properties of PAR thin film with various treatment conditions. The surface morphology and cross section of the PAR thin film was observed by AFM (atomic force microscopy) and FE-SEM (filed emission scanning electron microscopy).



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