Effects of Soft Baking Temperature on the Properties of Solution Processed Zn-Sn-O Thin-Film Transistors

소프트 베이킹 온도가 용액기반 Zn-Sn-O 박막 트랜지스터의 전기적 특성에 미치는 영향

  • Lee, Jae-Won (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Cho, Won-Ju (Department of Electronic Materials Engineering, Kwangwoon University)
  • Received : 2015.11.05
  • Accepted : 2015.12.04
  • Published : 2016.01.01


In this study, the effects of soft baking temperature on the solution derived ZTO (Zn-Sn-O) TFTs (thin-film transistors) as a In-free oxide semiconductor were investigated. In spite of the same hard baking at high temperature($600^{\circ}C$), the electrical properties of ZTO TFT was greatly changed by a small difference in soft baking temperature($180{\sim}250^{\circ}C$). The performance of TFT was deteriorated as the soft baking temperature increased. Therefore, it is important to remove the water-related defects well as organic impurities from the ZTO films during soft baking for fabrication of solution-derived high performance of TFTs.


Supported by : 한국연구재단


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