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A Review : Improvement of Electrical Performance in the Oxide Semiconductor Thin Film Transistor Using Various Treatment

산화물 반도체의 다양한 처리를 통한 박막트랜지스터의 전기적 특성 향상

  • Kim, Taeyong (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Jang, Kyungsoo (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Raja, Jayapal (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Phu, Nguyen Thi Cam (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Sojin (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Kang, Seungmin (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Trinh, Than Thuy (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Lee, Youn-Jung (College of Information and Communication Engineering, Sungkyunkwan University) ;
  • Yi, Junsin (College of Information and Communication Engineering, Sungkyunkwan University)
  • 김태용 (성균관대학교 정보통신대학) ;
  • 장경수 (성균관대학교 정보통신대학) ;
  • ;
  • ;
  • 이소진 (성균관대학교 정보통신대학) ;
  • 강승민 (성균관대학교 정보통신대학) ;
  • ;
  • 이윤정 (성균관대학교 정보통신대학) ;
  • 이준신 (성균관대학교 정보통신대학)
  • Received : 2015.11.04
  • Accepted : 2015.12.24
  • Published : 2016.01.01

Abstract

The ultimate aims of display market is transparent or flexible. Researches have been carried out for various applications. It has been possible to reduced the process steps and get good electrical properties for semiconductors with large optical bandgaps. Oxide semiconductors have been established as one of the leading and promising technology for next generation display panels. In this paper, alternative treatment processes have been tried for oxide semiconductors of thin film transistors to increase the electrical properties of the thin film transistors and to investigate the mechanisms. There exist a various oxide semiconductors. Here, we focused on InGaZnO, ZnO and InSnZnO which are commercialized or researched actively.

Acknowledgement

Supported by : National Research Foundation of Korea (NRF)

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