AFM and C-F Properties of Ceramic Thin Film with Annealing Method

열처리 방법에 따른 세라믹 박막의 AFM 및 C-F 특성

  • 최운식 (세한대학교 기술교육과)
  • Received : 2015.07.20
  • Accepted : 2015.08.03
  • Published : 2015.09.01


The $Sr_{0.7}Bi_{2.3}Nb_2O_9(SBN)$ thin films are deposited on Pt electrode($Pt/Ti/SiO_2/Si$) using RF sputtering method at various deposition temperature. The deposition temperature of optimum was $300^{\circ}C$. SBN thin films were annealed at $500{\sim}700^{\circ}C$ using furnace and RTA, respectively. The surface roughness showed about 2.42 nm in annealing temperature($600^{\circ}C$) of furnace. The capacitance density of SBN thin films were increased with the increase of annealing temperature. The maximum capacitance density of $0.7{\mu}F/cm^2$ was obtained by annealing temperature($700^{\circ}C$). The frequency dependence of dielectric loss showed about 0.03 in frequency ranges of 1~1,000 kHz.


Supported by : 세한대학교


  1. T. K. Song, J. K. Lee, and H. J. Jung, Appl. Phys. Lett., 69, 3839 (1996). [DOI:]
  2. C. Bedoya, Ch. Muller, F. Jacob, Y. Gagou, M. A. Fremy, and E. Elkaim, J. Phys., 14, 11850 (2002).
  3. J. S. Kim, W. S. Choi, and C. H. Kim Trans. KIEE, 58, 546 (2009).
  4. K. Saito, M. Mitsuya, N. Nukaga, I. Yamaji, T. Akai, and H. Funakubo, J. Appl. Phys., 39, 5489 (2000). [DOI:]
  5. J. S. Kim, Trans. KIEE, 59, 1085 (2010).
  6. J. S. Kim, Trans. KIEE, 59, 1084 (2010).
  7. J. H. Lee, J. H. Koh, S. M. Koo, and B. M. Moon, J. Korean Inst. Electr. Electron. Mater. Eng., 12, 167 (1999).
  8. J. S. Kim, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 929 (2012).