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Zener ESD 보호회로 내장 전력 MOSFET 최적 설계

Study on the Design of Power MOSFET with ESD Protection Circuits

  • 남의석 (극동대학교 유비쿼터스IT학과) ;
  • 강이구 (극동대학교 태양광공학과)
  • Nahm, Eui-Seok (Department of Ubiquitous IT, Far East University) ;
  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • 투고 : 2015.08.07
  • 심사 : 2015.08.24
  • 발행 : 2015.09.01

초록

This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and $0.249{\Omega}{\cdot}cm^2$. And we designed ESD circuits using 2 series zener diode and 4 series zener diodes. After analyzing electrical characteristics, we obtained 26 V forward voltage drop and 47 V breakdown voltage. Therefore, This devices can enoughly use power module, SMPS and Automotive.

참고문헌

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