- Volume 28 Issue 9
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Zener ESD 보호회로 내장 전력 MOSFET 최적 설계
Study on the Design of Power MOSFET with ESD Protection Circuits
- Nahm, Eui-Seok (Department of Ubiquitous IT, Far East University) ;
- Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
- 투고 : 2015.08.07
- 심사 : 2015.08.24
- 발행 : 2015.09.01
This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and
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