- Volume 28 Issue 9
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Study on the Design of Power MOSFET with ESD Protection Circuits
Zener ESD 보호회로 내장 전력 MOSFET 최적 설계
- Nahm, Eui-Seok (Department of Ubiquitous IT, Far East University) ;
- Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
- Received : 2015.08.07
- Accepted : 2015.08.24
- Published : 2015.09.01
This paper was proposed 900 V Power MOSFET with ESD protection circuits using zener diodes. And we were carried out and analyzed its electrical characteristics. As a result of designing 900 V power MOSFET, we obtained 1,000 V breakdown voltage, 3.49 V threshold voltage and
- MOSFET Basics - Fairchild Semiconductor, 2000
- G. P. Sim, B. S. Ann, Y. H. Kang, Y. S. Hong, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 190 (2013)
- H. S. Lee, E. G. Kang, A. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
- Y. S. Hang, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 276 (2012).
- J. H. Lee, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 270 (2012).