- Volume 28 Issue 9
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The Fabrication of Super Junction IGBT with 3,000 V Class Super Junction Field Rings
3,000 V급 초접합 필드링을 갖는 초접합 IGBT 제작에 관한 연구
- Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
- 강이구 (극동대학교 태양광공학과)
- Received : 2015.08.08
- Accepted : 2015.08.24
- Published : 2015.09.01
This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.
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