DOI QR코드

DOI QR Code

The Fabrication of Super Junction IGBT with 3,000 V Class Super Junction Field Rings

3,000 V급 초접합 필드링을 갖는 초접합 IGBT 제작에 관한 연구

  • Kang, Ey Goo (Department of Photovoltaic Engineering, Far East University)
  • Received : 2015.08.08
  • Accepted : 2015.08.24
  • Published : 2015.09.01

Abstract

This paper was analyzed electrical characteristics of super junction IGBT with super junction field rings. As a result of super junction IGBT with super junction field rings, we obtained 3,300 V breakdown voltage and good thermal characteristics. we obtained shrinked chip size because field ring was decreased than field ring for conventional IGBT, too. And we fabricated super junction IGBT with super junction field rings. As a result of measuring fabricated chip, we obtained 3,300 V breakdown voltage. The fabricated devices were replaced thyristos using high voltage conversion, sufficiently.

References

  1. MOSFET Basics - Fairchild Semiconductor, 2000
  2. G. P. Sim, B. S. Ann, Y. H. Kang, Y. S. Hong, and E. G. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 26, 190 (2013)
  3. H. S. Lee, E. G. Kang, A. Shin, H. H. Shin, and M. Y. Sung, KIEE, 7 (2006).
  4. Y. S. Hang, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 276 (2012).
  5. J. H. Lee, E. S. Jung, and E. Y. Kang, J. Korean Inst. Electr. Electron. Mater. Eng., 25, 270 (2012).

Cited by

  1. Characterization and Performance Evaluation of the Superjunction RB-IGBT in Matrix Converter vol.33, pp.4, 2018, https://doi.org/10.1109/TPEL.2017.2709323