Influence of Source/Drain Electrodes on the Properties of Zinc Tin Oxide Transparent Thin Film Transistors

Zinc Tin Oxide 투명 박막트랜지스터의 특성에 미치는 소스/드레인 전극의 영향

  • Ma, Tae Young (Department of Electrical Engineering & ERI, Gyeongsang National University) ;
  • Cho, Mu Hee (Department of Electrical Engineering & ERI, Gyeongsang National University)
  • 마대영 (경상대학교 전기공학과 및 공학연구원) ;
  • 최무희 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2015.03.18
  • Accepted : 2015.06.17
  • Published : 2015.07.01


Zinc tin oxide transparent thin film transistors (ZTO TTFTs) were fabricated by using $n^+$ Si wafers as gate electrodes. Indium (In), aluminum (Al), indium tin oxide (ITO), silver (Ag), and gold (Au) were employed for source and drain electrodes, and the mobility and the threshold voltage of ZTO TTFTs were observed as a function of electrode. The ZTO TTFTs adopting In as electrodes showed the highest mobility and the lowest threshold voltage. It was shown that Ag and Au are not suitable for the electrodes of ZTO TTFTs. As the results of this study, it is considered that the interface properties of electrode/ZTO are more influential in the properties of ZTO TTFTs than the conductivity of electrode.


Supported by : 한국연구재단


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