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Radiation Damage of Semiconductor Device by X-ray

엑스선에 의한 반도체 소자의 방사선 손상

  • Kim, D.S. (Department of Physics, Myongji University) ;
  • Hong, H.S. (Department of Physics, Myongji University) ;
  • Park, H.M. (Department of Physics, Myongji University) ;
  • Kim, J.H. (Department of Physics, Myongji University) ;
  • Joo, K.S. (Department of Physics, Myongji University)
  • Received : 2015.03.09
  • Accepted : 2015.06.15
  • Published : 2015.06.30

Abstract

Recently, Due to the increased industry using radiation inspection equipment in the semiconductor, this demand of technology research is increasing. Although semiconductor inspection equipment is using low energy X-ray from 40 keV to 120 keV, Studies of radiation damage about the low energy X-ray are lacking circumstance in our country. Therefore, It is study that BJT (bipolar junction transistor) of one type of semiconductor elements are received radiation damage by low energy X-ray. BJT were used to the NXP semiconductor company's BC817-25 (NPN type), and Used the X-ray generator for the irradiation. Radiation damage of BJT was evaluated that confirm to analyse change of collector-emitter voltage of before and after X-ray irradiation when current gain fixed to 10. X-ray generator of tube voltage was setting 40 kVp, 60 kVp, 80 kVp, 100 kVp, 120 kVp and irradiation time was setting 180s, 360s, 540s into 180s intervals. As the result, We confirmed radiation damage in BJT by low energy X-ray under 120 keV energy, and Especially the biggest radiation damage was appeared at the 80 kVp. It is expected that ELDRS (enhanced low dose rate sensitivity) phenomenon occurs on the basis of 80 kVp. This studies expect to contribute effective dose administration of semiconductor inspection equipment using low energy X-ray, Also Research and Development of X-ray filter.

Acknowledgement

Grant : 50nm급 고해상도 영상과 950kV급 고에너지 영상의 획득이 가능한 고성능 X-Ray Source 원천기술 개발

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