Radiation Damage of Semiconductor Device by X-ray

엑스선에 의한 반도체 소자의 방사선 손상

  • Kim, D.S. (Department of Physics, Myongji University) ;
  • Hong, H.S. (Department of Physics, Myongji University) ;
  • Park, H.M. (Department of Physics, Myongji University) ;
  • Kim, J.H. (Department of Physics, Myongji University) ;
  • Joo, K.S. (Department of Physics, Myongji University)
  • Received : 2015.03.09
  • Accepted : 2015.06.15
  • Published : 2015.06.30


Recently, Due to the increased industry using radiation inspection equipment in the semiconductor, this demand of technology research is increasing. Although semiconductor inspection equipment is using low energy X-ray from 40 keV to 120 keV, Studies of radiation damage about the low energy X-ray are lacking circumstance in our country. Therefore, It is study that BJT (bipolar junction transistor) of one type of semiconductor elements are received radiation damage by low energy X-ray. BJT were used to the NXP semiconductor company's BC817-25 (NPN type), and Used the X-ray generator for the irradiation. Radiation damage of BJT was evaluated that confirm to analyse change of collector-emitter voltage of before and after X-ray irradiation when current gain fixed to 10. X-ray generator of tube voltage was setting 40 kVp, 60 kVp, 80 kVp, 100 kVp, 120 kVp and irradiation time was setting 180s, 360s, 540s into 180s intervals. As the result, We confirmed radiation damage in BJT by low energy X-ray under 120 keV energy, and Especially the biggest radiation damage was appeared at the 80 kVp. It is expected that ELDRS (enhanced low dose rate sensitivity) phenomenon occurs on the basis of 80 kVp. This studies expect to contribute effective dose administration of semiconductor inspection equipment using low energy X-ray, Also Research and Development of X-ray filter.


Grant : 50nm급 고해상도 영상과 950kV급 고에너지 영상의 획득이 가능한 고성능 X-Ray Source 원천기술 개발


  1. McDonald PT, Henson BG, Stapor WJ, Mark Harris. Destructive heavy ion SEE Investigation of 3 IGBT devices. Radiation Effects Data Workshop. 2000 July 11-15.
  2. Srour JR, Cheryl J. Marshall, Paul W. Marshall. Review of displacement damage effects in silicon devices. IEEE Trans Nucl Sci. 2003;50(3):653-670.
  3. Daniel MF. Total ionizing effects in MOS and low-dose-rate-sensitive linear-bipolar devices. IEEE Trans Nucl Sci. 2013;60(3):1706-1730
  4. Harold PH, Ronald LP, Steven CW, Marty RS, James RS, Arthur HE, Charles EH, Thomas RM. Mechanisms for radiation dose-rate sensitivity of bipolar transistors. IEEE Trans Nucl Sci. 2013; 50(6):1901-1909
  5. Ronald LP, Lewis MC, Daniel MF, Mark AG, Tom LT, Dennis BB, Allan HJ. A proposed hardness assurance test methodology for bipolar linear circuits and devices in a space ionizing radiation environment. IEEE Trans Nucl Sci. 1997;44(6) :1981-1988
  6. Rashkeev SN, Fleetwood DM, Schrimpf RD, Pantelides ST. Defect generation by hydrogen at the $Si-SiO_2$ interface. Phys Rev Lett. 2001:87(16): 165506
  7. Pershenkov VS, Chumakov KA, Nikforov AY, Chumakov AI, Ulimov VN, Romanenko AA. Interface trap model for the low-dose-rate effect in bipolar devices. RADECS 2007 European Conference, 2007 September 1-6.
  8. Rashkeev SN, Cirba CR, Fleetwood DM, Schrimpf RD, Witczak SC, Michez A, Pantelides ST. Physical model for enhaced interface-trap formation at low dose rate. IEEE Trans Nucl Sci. 2002;49(6):2650-2655
  9. Fleetwood DM, Kosier SL, Nowlin RN, Schrimpf RD, Reber RA, Delaus JM, Winokur PS, Wei A, Combs WE, Pease RL. Physical mechanisms contributing to enhanced bipolar gain degradation at low dose rates. IEEE Trans Nucl Sci. 1994;41 (6):1871-1883
  10. Leonidas T, Ronald DS, Daniel MF, Ronald LP, Sokrates TP. Common origin for enhanced low-dose-rate sensitivity and bias temperature instability under negative bias. IEEE Trans Nucl Sci. 2005;52:2265-2271