Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Simulation Method of Temperature Dependent Threshold Voltage Shift in Metal Oxide Thin-film Transistors

온도에 의한 산화물 박막트랜지스터의 문턱전압 이동 시뮬레이션 방안

  • Kwon, Seyong (Department of Electronics Engineering, Seoul National University of Science and Technology) ;
  • Jung, Taeho (Department of Electronics Engineering, Seoul National University of Science and Technology)
  • 권세용 (서울과학기술대학교 전자공학과) ;
  • 정태호 (서울과학기술대학교 전자공학과)
  • Received : 2014.10.22
  • Accepted : 2015.02.04
  • Published : 2015.03.01

Abstract

In this paper, we propose a numerical method to model temperature dependent threshold voltage shift observed in metal oxide thin-film transistors (TFTs). The proposed model is then implemented in AIM-SPICE circuit simulation tool. The proposed method consists of modeling the well-known stretched-exponential time dependent threshold voltage shift and their temperature dependent coefficients. The outputs from AIM-SPICE tool and the stretched-exponential model at different temperatures in the literature are compared and they show a good agreement. Since metal oxide TFTs are the promising candidate for flat panel displays, the proposed method will be a good stepping stone to help enhance reliability of fast-evolving display circuits.

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Acknowledgement

Supported by : 서울과학기술대학교

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