An international Comparison Measurement of Silicon Wafer Sheet Resistance using the Four-point Probe Method

• Kang, Jeon-Hong ;
• Ying, Gao ;
• Cheng, Yuh-Chuan ;
• Kim, Chang-Soo ;
• Lee, Sang-Hwa ;
• Yu, Kwang-Min
• Accepted : 2014.09.04
• Published : 2015.01.01
• 42 7

Abstract

With approval from the Asia Pacific Metrology Program Working Group on Materials Metrology (APMP WGMM), an international comparison for sheet resistance standards for silicon wafers was firstly conducted among Korea Research Institute of Standards and Science (KRISS) in Korea, CMS/ITRI in Taiwan, and NIM in China, which are national metrology institutes (NMIs), from August 2011 to January 2012. The sheet resistance values of the standards are $10{\Omega}$, $100{\Omega}$, and $1000{\Omega}$; the measurement was conducted in sequence at KRISS, CMS/ITRI, NIM, and KRISS again using the four-point probe method with single and dual configuration techniques. The reference value for the measurement results of the three NMIs was obtained through averaging the values of the three results for each sheet resistance range. The differences between the reference value and the measured values is within 0.22% for $10{\Omega}$, 0.17% for $100{\Omega}$, and 0.12% for $1000{\Omega}$. Therefore, the international consistency for conducting sheet resistance measurements is confirmed within 0.22% through the APMP WGMM approved comparison.

Keywords

Four-point probe method;Single & dual configuration;Collinear four point probe;Sheet resistance;Silicon wafer;Uncertainty

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