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Evaluation of Radio-Frequency Performance of Gate-All-Around Ge/GaAs Heterojunction Tunneling Field-Effect Transistor with Hetero-Gate-Dielectric by Mixed-Mode Simulation

  • Roh, Hee Bum ;
  • Seo, Jae Hwa ;
  • Yoon, Young Jun ;
  • Bae, Jin-Hyuk ;
  • Cho, Eou-Sik ;
  • Lee, Jung-Hee ;
  • Cho, Seongjae ;
  • Kang, In Man
  • Received : 2014.10.31
  • Accepted : 2014.07.08
  • Published : 2014.11.01

Abstract

In this work, the frequency response of gate-all-around (GAA) Ge/GaAs heterojunction tunneling field-effect transistor (TFET) with hetero-gate-dielectric (HGD) and pnpn channel doping profile has been analysed by technology computer-aided design (TCAD) device-circuit mixed-mode simulations, with comparison studies among ppn, pnpn, and HGD pnpn TFET devices. By recursive tracing of voltage transfer curves (VTCs) of a common-source (CS) amplifier based on the HGD pnpn TFET, the operation point (Q-point) was obtained at $V_{DS}=1V$, where the maximum available output swing was acquired without waveform distortion. The slope of VTC of the amplifier was 9.21 V/V (19.4 dB), which mainly resulted from the ponderable direct-current (DC) characteristics of HGD pnpn TFET. Along with the DC performances, frequency response with a small-signal voltage of 10 mV has been closely investigated in terms of voltage gain ($A_v$), unit-gain frequency ($f_{unity}$), and cut-off frequency ($f_T$). The Ge/GaAs HGD pnpn TFET demonstrated $A_v=19.4dB$, $f_{unity}=10THz$, $f_T=0.487$ THz and $f_{max}=18THz$.

Keywords

Frequency response;Gate-all-around;Heterojunction;Tunneling field-effect transistor;Hetero-gate-dielectric;TCAD;Mixed-mode simulation

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Acknowledgement

Supported by : National Research Foundation of Korea (NRF)