Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Nitrogen Doping Characterization of ZnO Prepared by Atomic Layer Deposition

원자층 증착법으로 성장된 ZnO 박막의 질소 도핑에 대한 연구

  • Kim, Doyoung (School of Electricity and Electronics, Ulsan College)
  • 김도영 (울산과학대학교 전기전자공학부)
  • Received : 2014.08.20
  • Accepted : 2014.09.15
  • Published : 2014.10.01

Abstract

For feasible study of opto-electrical application regarding to oxide semiconductor, we implemented the N doped ZnO growth using a atomic layer deposition technique. The p-type ZnO deposition, necessary for ZnO-based optoelectronics, has considered to be very difficulty due to sufficiently deep acceptor location and self-compensating process on doping. Various sources of N such as $N_2$, $NH_3$, NO, and $NO_2$ and deposition techniques have been used to fabricate p-type ZnO. Hall measurement showed that p-type ZnO was prepared in condition with low deposition temperature and dopant concentration. From the evaluation of photoluminescence spectroscopy, we could observe defect formation formed by N dopant. In this paper, we exhibited the electrical and optical properties of N-doped ZnO thin films grown by atomic layer deposition with $NH_3OH$ doping source.

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Acknowledgement

Supported by : 울산과학대학교

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