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Developing of Super Junction MOSFET According to Charge Imbalance Effect

전하 불균형 효과를 고려한 Super Junction MOSFET 개발에 관한 연구

  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • Received : 2014.07.24
  • Accepted : 2014.09.01
  • Published : 2014.10.01

Abstract

This paper was analyzed electrical characteristics of super junction power MOSFET considering to charge imbalance. We extracted optimal design and process parameter at -15% of charge imbalance. Considering extracted design and process parameters, we fabricated super junction MOSFET and analyzed electrical characteristics. We obtained 600~650 V breakdown voltage, $224{\sim}240m{\Omega}$ on resistance. This paper was showed superior on resistance of super junction MOSFET. We can use for automobile industry.

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