Abstract

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

Keywords

• Super juction;
• Latch up;
• n-pillar;
• p-pillar;
• On-resistance;
• Breakdown voltage;
• Trench angle;
• Power devices;
• Power MOSFET;
• Epi-layer;
• Latch-up

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