- Volume 27 Issue 9
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Study on Latch Up Characteristics of Super Junction MOSFET According to Trench Etch Angle
Trench 식각각도에 따른 Super Juction MOSFET의 래치 업 특성에 관한 연구
- Chung, Hun Suk (Department of Photovolatic Engineering, Far East University) ;
- Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
- Received : 2014.07.30
- Accepted : 2014.08.24
- Published : 2014.09.01
This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was
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