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Study on Latch Up Characteristics of Super Junction MOSFET According to Trench Etch Angle

Trench 식각각도에 따른 Super Juction MOSFET의 래치 업 특성에 관한 연구

  • Chung, Hun Suk (Department of Photovolatic Engineering, Far East University) ;
  • Kang, Ey Goo (Department of Photovolatic Engineering, Far East University)
  • Received : 2014.07.30
  • Accepted : 2014.08.24
  • Published : 2014.09.01

Abstract

This paper was showed latch up characteristics of super junction power MOSFET by parasitic thyristor according to trench etch angle. As a result of research, if trench etch angle of super junction MOSFET is larger, we obtained large latch up voltage. When trench etch angle was $90^{\circ}$, latch up voltage was more 50 V. and we got 700 V breakdown voltage. But we analyzed on resistance. if trench etch angle of super junction MOSFET is larger, we obtained high on resistance. Therefore, we need optimal point by simulation and experiment for solution of trade off.

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