Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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N-type Si Schottky Junction Photoelectric Device Using Nickel and Silver

Ni과 Ag 금속을 이용한 N-type Si Schottky Junction 광전소자

  • Seo, Cheolwon (Department of Electrical Engineering, Incheon National University) ;
  • Hong, Seung-Hyouk (Department of Electrical Engineering, Incheon National University) ;
  • Yun, Ju-Hyung (Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • Received : 2014.03.10
  • Accepted : 2014.04.17
  • Published : 2014.06.01

Abstract

A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.

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Acknowledgement

Supported by : 한국에너지기술평가원, 미래창조과학부

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