DOI QR코드

DOI QR Code

N-type Si Schottky Junction Photoelectric Device Using Nickel and Silver

Ni과 Ag 금속을 이용한 N-type Si Schottky Junction 광전소자

  • Seo, Cheolwon (Department of Electrical Engineering, Incheon National University) ;
  • Hong, Seung-Hyouk (Department of Electrical Engineering, Incheon National University) ;
  • Yun, Ju-Hyung (Department of Electrical Engineering, Incheon National University) ;
  • Kim, Joondong (Department of Electrical Engineering, Incheon National University)
  • Received : 2014.03.10
  • Accepted : 2014.04.17
  • Published : 2014.06.01

Abstract

A thin metal-embedding Schottky device was fabricated for an efficient photoelectric device. Semitransparent thick of 10 nm metal layers were deposited by sputtering of Ag and Ni on a Si substrate. The (111) N-type Si wafers with one-side polished, 450~500 ${\mu}m$ and resistivity $1{\sim}20{\Omega}{\cdot}cm$ were used. High rectifying ratio about 100 from Ni-Schottky device was achieved. This design would provide an effective scheme for high-performing photoelectric devices.

Acknowledgement

Supported by : 한국에너지기술평가원, 미래창조과학부

References

  1. C. Y. Liu, and U. R. Kortshagen, Nanoscale Research Letters, 5, 1253 (2010). https://doi.org/10.1007/s11671-010-9632-z
  2. S. H. Hong, J. H. Yun, H. H. Park, and J. Kim, Appl. Phys. Lett., 103, 153504 (2013). https://doi.org/10.1063/1.4824688
  3. D. Zadeh, Y. Suzuki, K. Kakushiima, A. Nishiyama, N. Sugii, K. Tsutsui, and H. Iwai, Characterization of Metal Schottky Junction for InGaAs Substrate Characterization of Metal Schottky Junction for InGaAs Substrate (2013).
  4. M. Soylu and F. Yakuphanoglu, Thin Solid Films, 519, 1950 (2011). https://doi.org/10.1016/j.tsf.2010.10.030
  5. S. J. Tark, Y. D. Kim, S. M. Kim, S. E. Park, and D. H. Kim, New & Renewable Energy, 8, 12 (2012).
  6. S. W. Glunz, S. Rein, J. Y. Lee, and W. Warta, J. Appl. Phys., 90, 2397 (2001). https://doi.org/10.1063/1.1389076
  7. D. Macdonald, F. Rougieux, A. Cuevas, B. Lim, J. Schmidt, M. Di Sabatino, and L. J. Geerligs, J. Appl. Phys., 105, 093704 (2009). https://doi.org/10.1063/1.3121208