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Effect of Uderpass Structure on Quality Factor and Breakdown Voltage in RF Inductor

RF 인덕터의 Underpass에 따른 품질 계수 및 항복전압 특성

  • Shin, Jong-Kwan (Department of Electronics Engineering, Chungnam National University) ;
  • Kwon, Sung-Kyu (Department of Electronics Engineering, Chungnam National University) ;
  • Jang, Sung-Yong (Department of Electronics Engineering, Chungnam National University) ;
  • Jung, Jin-Woong (Department of Electronics Engineering, Chungnam National University) ;
  • Yu, Jae-Nam (Department of Electronics Engineering, Chungnam National University) ;
  • Oh, Sun-Ho (Department of Electronics Engineering, Chungnam National University) ;
  • Kim, Choul-Young (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • Received : 2014.04.29
  • Accepted : 2014.05.19
  • Published : 2014.06.01

Abstract

In this paper, the effect of underpass structure on quality factor and breakdown voltage of octagonal inductors which were fabricated with 90 nm complementary metal-oxide-semiconductor (CMOS) technology for radio frequency integrated circuit (RFIC) was studied. It was found that quality factor and breakdown voltage of inductors with more than one metal layer for underpass showed improved properties compared to those with one metal layer. However, little change of quality factor and breakdown voltage was observed between the inductors with two and more than two metal layers for underpass. Therefore, underpasses with two metal layers are promising for RFIC designs of the octagonal inductors in 90 nm CMOS technology.

Acknowledgement

Supported by : 한국산업기술평가관리원

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