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Analysis on the Field Effect Mobility Variation of Tin Oxide Thin Films with Oxygen Partial Pressure

산소 분압에 따른 산화주석 박막의 전계효과 이동도 변화 분석

  • Ma, Tae Young (Department of Electrical Engineering and ERI, Gyeongsang national University)
  • 마대영 (경상대학교 전기공학과 및 공학연구원)
  • Received : 2014.03.25
  • Accepted : 2014.05.21
  • Published : 2014.06.01

Abstract

Bottom-gate tin oxide ($SnO_2$) thin film transistors (TFTs) were fabricated on $N^+$ Si wafers used as gate electrodes. 60-nm-thick $SnO_2$ thin films acting as active layers were sputtered on $SiO_2/Al_2O_3$ films. The $SiO_2/Al_2O_3$ films deposited on the Si wafers were employed for gate dielectrics. In order to increase the resistivity of the $SnO_2$ thin films, oxygen mixed with argon was introduced into the chamber during the sputtering. The mobility of $SnO_2$ TFTs was measured as a function of the flow ratio of oxygen to argon ($O_2/Ar$). The mobility variation with $O_2/Ar$ was analyzed through studies on crystallinity, oxygen binding state, optical properties. X-ray diffraction (XRD) and XPS (X-ray photoelectron spectroscopy) were carried out to observe the crystallinity and oxygen binding state of $SnO_2$ films. The mobility decreased with increasing $O_2/Ar$. It was found that the decrease of the mobility is mainly due to the decrease in the polarizability of $SnO_2$ films.

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