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Se-loss-induced CIS Thin Films in RTA Process after Co-sputtering Using CuSe2 and InSe2 Targets

  • Kim, Nam-Hoon ;
  • Jun, Young-Kil ;
  • Cho, Geum-Bae
  • Received : 2013.12.03
  • Accepted : 2014.03.19
  • Published : 2014.05.01

Abstract

Chalcopyrite $CuInSe_2$ (CIS) thin films were prepared without Se- / S-containing gas by co-sputtering using $CuSe_2$ and $InSe_2$ selenide-targets and rapid thermal annealing. The grain size increased to a maximum of 54.68 nm with a predominant (112) plane. The tetragonal distortion parameter ${\eta}$ decreased and the inter-planar spacing $d_{(112)}$ increased in the RTA-treated CIS thin films annealed at a $400^{\circ}C$, which indicates better crystal quality. The increased carrier concentration of RTA-treated p-type CIS thin films led to a decrease in resistivity due to an increase in Cu composition at annealing temperatures ${\geq}350^{\circ}C$. The optical band gap energy ($E_g$) of CIS thin films decreased to 1.127 eV in RTA-treated CIS thin films annealed at $400^{\circ}C$ due to the improved crystallinity, elevated carrier concentration and decreased In composition.

Keywords

Thin Film;$CuSe_2$ and $InSe_2$ Targets;Co-sputtering;RTA

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