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Design and Fabrication of Super Junction MOSFET Based on Trench Filling and Bottom Implantation Process

  • Jung, Eun Sik ;
  • Kyoung, Sin Su ;
  • Kang, Ey Goo
  • Received : 2013.08.27
  • Accepted : 2013.12.03
  • Published : 2014.05.01

Abstract

In Super Junction MOSFET, Charge Balance is the most important issue of the trench filling Super Junction fabrication process. In order to achieve the best electrical characteristics, the N type and P type drift regions must be fully depleted when the drain bias approaches the breakdown voltage, called Charge Balance Condition. In this paper, two methods from the fabrication process were used at the Charge Balance condition: Trench angle decreasing process and Bottom implantation process. A lower on-resistance could be achieved using a lower trench angle. And a higher breakdown voltage could be achieved using the bottom implantation process. The electrical characteristics of manufactured discrete device chips are compared with those of the devices which are designed of TCAD simulation.

Keywords

Super junction MOSFET;Charge balance;Trench angle;Bottom implantation

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  1. The $R_{\mathrm{\scriptscriptstyle ON},\mathrm {min}}$ of Balanced Symmetric Vertical Super Junction Based on R-Well Model vol.64, pp.1, 2017, https://doi.org/10.1109/TED.2016.2632113
  2. Concept and design of super junction devices vol.39, pp.2, 2018, https://doi.org/10.1088/1674-4926/39/2/021001