Fabrication and Properties of ZnSnO3 Piezoelectric Films Deposited by a Pulsed Laser Deposition

Pulsed Laser Deposition 방법으로 증착된 ZnSnO3 압전 박막의 성장과 특성 평가

  • Park, Byeong-Ju (Department of Materials Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
  • Received : 2013.10.11
  • Accepted : 2013.11.21
  • Published : 2014.01.01


Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.


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