DOI QR코드

DOI QR Code

Fabrication and Properties of ZnSnO3 Piezoelectric Films Deposited by a Pulsed Laser Deposition

Pulsed Laser Deposition 방법으로 증착된 ZnSnO3 압전 박막의 성장과 특성 평가

  • Park, Byeong-Ju (Department of Materials Engineering, Chungnam National University) ;
  • Yoon, Soon-Gil (Department of Materials Engineering, Chungnam National University)
  • Received : 2013.10.11
  • Accepted : 2013.11.21
  • Published : 2014.01.01

Abstract

Because the Pb-based piezoelectric materials showed problems such as an environmental pollution. lead-free $O_3$ materials were studied in the present study. The $O_3$ thin films were deposited at $640^{\circ}C$ on $Pt/Ti/SiO_2$ substrate by pulsed laser deposition (PLD) and were annealed for 5 min at $750^{\circ}C$ using rapid thermal annealing (RTA) in nitrogen atmosphere. Samples annealed at $750^{\circ}C$ showed a smooth morphology and an improvement of the dielectric and leakage properties, as compared with as-grown samples. However, electrical properties of the $O_3$ thin films obtained in the present study should be improved for piezoelectric applications.

References

  1. H. A. Song, B. J. Park, and S. G. Yoon, J. KIEEME, 25, 5 (2012).
  2. S. I. Swartz and V. E. Wood, Condensed Mat. News, 1, 5 (1992).
  3. Y. Inaguma, M. Yoshida, and T. Katsumata, J. Am. Chem. Soc., 130, 21 (2008).
  4. J. Y. Son, G. H. Lee. M. H. Jo, H. G. Kim, H. M. Jang, and Y. H. Shin, J. Am. Chem. Soc., 131, 24 (2009). https://doi.org/10.1021/ja806218x
  5. H. Wang, H. Huang, and B. Wang, Solid State Commun., 149, 1849 (2009). https://doi.org/10.1016/j.ssc.2009.07.009
  6. M. Nakayama, M. Nogami, M. Yoshida, T. Katsumata, and Y. Inaguma, Adv. Mater., 22, 2579 (2010). https://doi.org/10.1002/adma.200903432
  7. J. Zhang, K. L. Yao, Z. L. Liu, G. Y. Gao, Z. Y. Sun, and S. W. Fan, PCCP, 12, 9197 (2010). https://doi.org/10.1039/b920065g