Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Characteristics of Hillock Formation in the Al-1%Si Film by the Effect of Ion Implantation and Substrate Temperature

이온 주입과 기판 온도 효과에 의한 Al-1%Si 박막의 Hillock 형성 특성

  • Choi, Chang-Auk (Nano Convergence Sensor Research Section, ETRI) ;
  • Lee, Yong-Bong (Convergence Components & Materials Research Laboratory, ETRI) ;
  • Kim, Jeong-Ho (Department of Computer Engineering, Dean of Graduate School of Information & Communication, Hanbat National University)
  • 최창억 (한국전자통신연구원 나노융합센서연구실) ;
  • 이용봉 (한국전자통신연구원 부품소재연구부문 연구협력팀) ;
  • 김정호 (국립한밭대학교 정보통신전문대학원 컴퓨터공학부)
  • Received : 2013.10.02
  • Accepted : 2013.11.22
  • Published : 2014.01.01

Abstract

As packing density in integrated circuits increases, multilevel metallization process has been widely used. But hillock formed in the bottom layers of aluminum are well known to make interlayer short in multilevel metallization. In this study, the effects of ion implantation to the metal film and deposition temperature on the hillock formation were investigated. The Al-1%Si thin film of $1{\mu}m$ thickness was DC sputtered with substrate ($SiO_2/Si$) temperature of $20^{\circ}C$, $200^{\circ}C$, and $400^{\circ}C$, respectively. Ar ions ($1{\times}10^{15}cm^{-2}$: 150 keV) and B ions ($1{\times}10^{15}cm^{-2}$, 30 keV, 150 keV) were implanted to the Al-Si thin film. The deposited films were evaluated by SEM, surface profiler and resistance measuring system. As a results, Ar implanting to Al-Si film is very effective to reduce hillock size in the metal deposition temperature below than $200^{\circ}C$, and B implanting to an Al-Si film is effective to reduce hillock density in the high temperature deposition conditions around $400^{\circ}C$. Line width less than $3{\mu}m$ was free of hillock after alloying.

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