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The Structural Characteristics of MgxZn1-xO Thin Films with Sputtering Power by Co-sputtering Method

Co-sputtering법으로 제작된 MgxZn1-xO 박막의 인가 파워에 따른 구조적 특성

  • Kim, Sang Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Son, Jihoon (DRAM Development Division, SK Hynix) ;
  • Jang, Nakwon (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Kim, Hong Seong (Department of Nano Semiconductor Engineering, Korea Maritime University) ;
  • Yun, Young (Department of Radio Communication Engineering, Korea Maritime University)
  • 김상현 (한국해양대학교 전기전자공학부) ;
  • 손지훈 (SK 하이닉스 DRAM 개발본부) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노반도체공학과) ;
  • 윤영 (한국해양대학교 전파공학과)
  • Received : 2012.10.19
  • Accepted : 2013.01.04
  • Published : 2013.02.01

Abstract

The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing UV LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The $Mg_xZn_{1-x}O$ thin films have sufficient crystallinity on the high ZnO power. The EDS analyzed showed that the Mg content in the $Mg_xZn_{1-x}O$ films decreased from 3.99 to 24.27 at.% as the RF power of ZnO target increased. The Mg content in the $Mg_xZn_{1-x}O$ films could be controlled by co-sputtering power.

Acknowledgement

Supported by : 정보통신산업진흥원

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