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Two Step Texturing Using RIE and Wet Etching for Crystalline Silicon Solar Cell

알카리 식각과 반응성 이온 식각을 이용한 결정질 실리콘 2단계 표면 조직화 공정

  • Yeo, In Hwan (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Park, Ju Eok (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Kim, Jun Hee (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Cho, Hae Sung (Department of Electronic Engineering, Korea National University of Transportation) ;
  • Lim, Donggun (Department of Electronic Engineering, Korea National University of Transportation)
  • 여인환 (한국교통대학교 전자공학과) ;
  • 박주억 (한국교통대학교 전자공학과) ;
  • 김준희 (한국교통대학교 전자공학과) ;
  • 조해성 (한국교통대학교 전자공학과) ;
  • 임동건 (한국교통대학교 전자공학과)
  • Received : 2012.10.26
  • Accepted : 2012.12.31
  • Published : 2013.02.01

Abstract

Lowering surface reflectance of silicon wafer by texturization is one of the most important processes to improve the efficiency of silicon solar cells. Generally, the texturing of crystalline silicon was carried out using alkaline solution. The average reflectance of this method was 11% at the wavelength between 400 and 1,000 nm. In this study, the wafers were first texturing by NaOH solution at $80^{\circ}C$ for 35 min. Then the wafers were texturing by $SF_6$ and $O_2$ plasma in RIE (Reactive Ion Etching). The average reflectance of two step texturing was reduced to below 5% at the wavelength between 400 and 1,000 nm.

Acknowledgement

Supported by : 한국교통대학교, 한국연구재단

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