Effects of Gas Mixing Ratio on the Properties of Thin Films in the ZnO Synthesis by MOCVD

MOCVD에 의한 ZnO 합성에서 기체혼합비가 박막의 물성에 미치는 영향

  • SeoMoon, Kyu (Department of Applied Chemistry, Cheongju University) ;
  • Lee, JongIn (Department of Applied Chemistry, Cheongju University)
  • Received : 2013.01.07
  • Accepted : 2013.01.18
  • Published : 2013.02.01


ZnO thin films were synthesized on Si substrates by MOCVD using diethyl zinc as a precursor. Effects of $O_2$/DEZ gas mixing ratio on the growth rate, surface morphology, preferred orientation, and electrical properties of the ZnO thin films were investigated with SEM, XRD, and Hall measurement. The surface reflectance variations of ZnO thin films were analyzed using laser-photometer apparatus. As the $O_2$/DEZ mixing ratio increased, growth rate and $I_{(002)}/I_{(101)}$ in XRD of ZnO thin films decreased, and the crystal structure was changed from columnar to planar structure. All ZnO films deposited at various CVD conditions exhibited c-axis (002) plane preferred orientation. The electrical properties of ZnO thin films mainly depended on the carrier mobility.


Supported by : 청주대학교


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