Modeling and Simulation of Threshold Voltage Shift in Organic Thin-film Transistors

유기박막 트랜지스터에서 문턱전압 이동의 모델링 및 시뮬레이션

  • Jung, Taeho (Department of Electronic and IT Media Engineering, Seoul National University of Science and Technology)
  • 정태호 (서울과학기술대학교 전자IT미디어공학과)
  • Received : 2012.12.10
  • Accepted : 2013.01.22
  • Published : 2013.02.01


In this paper the author proposes a method of implementing a numerical model for threshold voltage ($V_{th}$) shift in organic thin-film transistors (OTFTs) into SPICE tools. $V_{th}$ shift is first numerically modeled by dividing the shift into sequentially ordered groups. The model is then used to derive a simulations model which takes into simulation parameters and calculation complexity. Finally, the numerical and simulation models are implemented in AIM-SPICE. The SPICE simulation results agree well with the $V_{th}$ shift obtained from an OTFT fabricated without any optimization. The proposed method is also used to implement the stretched-exponential time dependent $V_{th}$ shift in AIM-SPICE and the results show the proposed method is applicable to various types of $V_{th}$ shifts.


Supported by : 서울과학기술대학교


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