The Characteristics of Multi-layer Structure LED with MgxZn1-xO Thin Films

MgxZn1-xO를 활용한 Multi-layer 구조 LED 특성에 관한 연구

  • Son, Ji-Hoon (DRAM Development Division, SK Hynix) ;
  • Kim, Sang-Hyun (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Jang, Nak-Won (Division of Electrical and Electronics Engineering, Korea Maritime University) ;
  • Kim, Hong-Seong (Department of Nano Semiconductor Engineering, Korea Maritime University)
  • 손지훈 (SK 하이닉스 DRAM 개발본부) ;
  • 김상현 (한국해양대학교 전기전자공학부) ;
  • 장낙원 (한국해양대학교 전기전자공학부) ;
  • 김홍승 (한국해양대학교 나노반도체공학과)
  • Received : 2012.08.10
  • Accepted : 2012.08.31
  • Published : 2012.10.01


The effect of co-sputtering condition on the structural properties of $Mg_xZn_{1-x}O$ thin films grown by RF magnetron co-sputtering system was investigated for manufacturing ZnO/MgZnO structure LED. $Mg_xZn_{1-x}O$ thin films were grown with ZnO and MgO target varying RF power. Structural properties were investigated by X-ray diffraction (XRD) and Energy dispersive spectroscopy (EDS). The ZnO thin films have sufficient crystallinity on the high RF power. As RF power of ZnO target increased, the contents of MgO in the $Mg_xZn_{1-x}O$ film decreased. LED was manufactured using ZnO/MgZnO multi-layer on p-GaN/$Al_2O_3$ substrate. Threshold voltage of multi-layer LED was appeared at 8 V, and it was luminesced at wave length of 550 nm.


Supported by : 정보통신산업진흥원


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