Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Electrical Properties of Al3+ and Y3+ Co-doped SnO2 Transparent Conducting Films

Al3+와 Y3+ 동시치환 SnO2 투명전극 박막의 전기적 특성

  • Kim, Geun-Woo (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Seo, Yong-Jun (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Sung, Chang-Hoon (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Park, Keun-Young (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Cho, Ho-Je (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Heo, Si-Nae (School of Nano & Advanced Materials Engineering, Changwon National University) ;
  • Koo, Bon-Heun (School of Nano & Advanced Materials Engineering, Changwon National University)
  • 김근우 (창원대학교 나노신소재공학부) ;
  • 서용준 (창원대학교 나노신소재공학부) ;
  • 성창훈 (창원대학교 나노신소재공학부) ;
  • 박근영 (창원대학교 나노신소재공학부) ;
  • 조호제 (창원대학교 나노신소재공학부) ;
  • 허시내 (창원대학교 나노신소재공학부) ;
  • 구본흔 (창원대학교 나노신소재공학부)
  • Received : 2012.07.31
  • Accepted : 2012.08.29
  • Published : 2012.10.01

Abstract

Transparent conducting oxides (TCOs) have wide range of application areas in transparent electrode for display devices, Transparent coating for solar energy heat mirrors, and electromagnetic wave shield. $SnO_2$ is intrinsically an n-type semiconductor due to oxygen deficiencies and has a high energy-band gap more than 3.5 eV. It is known as a transparent conducting oxide because of its low resistivity of $10^{-3}{\Omega}{\cdot}cm$ and high transmittance over 90% in visible region. In this study, co-doping effects of Al and Y on the properties of $SnO_2$ were investigated. The addition of Y in $SnO_2$ was tried to create oxygen vacancies that increase the diffusivity of oxygen ions for the densification of $SnO_2$. The addition of Al was expected to increase the electron concentration. Once, we observed solubility limit of $SnO_2$ single-doped with Al and Y. $\{(x/2)Al_2O_3+(x/2)Y_2O_3\}-SnO_2$ was used for the source of Al and Y to prevent the evaporation of $Al_2O_3$ and for the charge compensation. And we observed the valence changes of aluminium oxide because generally reported of valence changes of aluminium oxide in Tin - Aluminium binary system. The electrical properties, solubility limit, densification and microstructure of $SnO_2$ co-doped with Al and Y will be discussed.

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Acknowledgement

Supported by : 정보통신산업진흥원, 한국연구재단

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