- Volume 25 Issue 9
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Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application
전류세기 조정이 가능한 대전력 발광다이오드 광원 회로용 정전류 다이오드 제작
- Park, Hwa-Jin (Department of Electronic Engineering, Sunmoon University) ;
- Yu, S.J. (Department of Electronic Engineering, Sunmoon University) ;
- Anil, K. (Department of Electronic Engineering, Sunmoon University) ;
- Yi, Yong-Gon (LITE Co. Ltd.) ;
- Kim, J.H. (Artronics Co. Ltd.) ;
- Han, T.S. (Department of Lift system Management, Korea Lift College)
- 박화진 (선문대학교 전자공학과) ;
- 유순재 (선문대학교 전자공학과) ;
- 이용곤 ((주) 라이트) ;
- 김진형 ((주) 아트로닉스) ;
- 한태수 (한국승강기대학교 승강기시스템관리학과)
- Received : 2012.07.20
- Accepted : 2012.08.25
- Published : 2012.09.01
A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch-off current of 8.82 mA and 11.56 mA were obtained for small and large cell in the CLD chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V. Measured knee voltage,
Supported by : 기술표준원
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