DOI QR코드

DOI QR Code

Fabrication of Current Intensity Convertible CLD of Large Current Intensity for LED Network Application

전류세기 조정이 가능한 대전력 발광다이오드 광원 회로용 정전류 다이오드 제작

  • Park, Hwa-Jin (Department of Electronic Engineering, Sunmoon University) ;
  • Yu, S.J. (Department of Electronic Engineering, Sunmoon University) ;
  • Anil, K. (Department of Electronic Engineering, Sunmoon University) ;
  • Yi, Yong-Gon (LITE Co. Ltd.) ;
  • Kim, J.H. (Artronics Co. Ltd.) ;
  • Han, T.S. (Department of Lift system Management, Korea Lift College)
  • Received : 2012.07.20
  • Accepted : 2012.08.25
  • Published : 2012.09.01

Abstract

A current intensity convertible CLD chip was fabricated using small and large FET cell configuration. Pinch-off current of 8.82 mA and 11.56 mA were obtained for small and large cell in the CLD chip, respectively. Constant current was fairly maintained until the breakdown voltage of 60 V. Measured knee voltage, $V_k$ were 3.8 V and 4.5 V for small and large cell, respectively. We configured current amplifying chip with parallel connection of each cells, by connecting 8 individual large cells in parallel network, 92.0 mA of current was obtained. The pinch-off constant current of CLD chip was varied very linearly with respect to the number of parallel connected cell.

Acknowledgement

Supported by : 기술표준원

References

  1. H. T. Kim, S. J. Noh, Y. S. Choi, and S. J. Yu, Journal of Information Display, 10, 97 (2009). https://doi.org/10.1080/15980316.2009.9652089
  2. S. J. Yu and D. H. Kim, J. KIEEME, 23, 34 (2010).
  3. F. Weifeng, H. Yongzhi, and S. G. Frank, 2010 Proceedings 60th Electronic Components and Technology Conference (ECTC, 2010) p. 512.
  4. T. F. L. Tam and B. M. H. Pong, IEEE 6th International Power Electronics and Motion Control Conference, 2009) p. 2527.
  5. S. Chin, Semiconductor Monthly, 49 (2000).
  6. U. Masayoshi, High Brightness Power LED Application Technique, 63 (2008).
  7. Y. J. Chen, W. C. Yang, C. S. Moo, and Y. C. Hsieh, TENCON 2010 (2010 IEEE Region 10 Conference, 2010) p. 2313.
  8. H. Mu, L. Geng, and J. Liu, 2011 Symposium on Photonics and Optoelectronics (2011) p. 1.
  9. E. F. Schubert, Light Emitting Diodes, 2nd Ed., 348 (2007).
  10. V. Radeka, P. Rahek, S. Rescia, E. Gatti, A. Longoni, M. Sampietro, G. Bertuccio, P. Holl, L. Struder, and J. Kemmer, IEEE Elec. Dev. Lett., 10, 91 (1989). https://doi.org/10.1109/55.32439
  11. C. Y. Hung, C. M. Hu, J. Gong, and W. C. Chan, 2010 10th IEEE International Conference on Solid-State and Integrated Circuit Technology (ICSICT, 2010) p. 963.
  12. S. Bellone, A. Caruso, G. Scarpetta, P. Spirito, and G. Vitale, IEEE Elec. Dev. Lett., 4, 449 (1983). https://doi.org/10.1109/EDL.1983.25798