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Electrical Performance of Amorphous SiZnSnO TFTs Depending on Annealing Temperature

실리콘산화아연주석 산화물 반도체의 후열처리 온도변화에 따른 트랜지스터의 전기적 특성 연구

  • Lee, Sang-Yeol (Department of Semiconductor Engineering, Cheongju University)
  • 이상렬 (청주대학교 반도체공학과)
  • Received : 2012.07.10
  • Accepted : 2012.08.21
  • Published : 2012.09.01

Abstract

The dependency of annealing temperature on the electrical performances in amorphous silicon-zinc-tin-oxide thin film transistors (SZTO-TFT) has been investigated. The SZTO channel layers were prepared by using radio frequency (RF) magnetron sputtering method with different annealing treatment. The field effect mobility (${\mu}_{FE}$) increased and threshold voltage ($V_{th}$) shifted to negative direction with increasing annealing temperature. As a result, oxygen vacancies generated in SZTO channel layer with increasing annealing temperature resulted in negative shift in $V_{th}$ and increase in on-current.

References

  1. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature, 432, 488 (2004). https://doi.org/10.1038/nature03090
  2. J. Y. Kwon, J. S. Jung, K. S. Son, K. H Lee, J. S. Park, T. S. Kim, J. S. Park, R. Choi, J. K. Jeong, B. W. Koo, and S. Y. Lee, J. Electrochem. Soc., 158, H433 (2011). https://doi.org/10.1149/1.3552700
  3. J. S. Park, T. S. Kim, K. S. Son, K. H. Lee, W. J. Maeng, H. S. Kim, E. S. Kim, K. B. Park, J. B. Seon, W. Choi, M. K. Ryu, and S. Y. Lee, Appl. Phys. Lett., 96, 262109 (2010). https://doi.org/10.1063/1.3435482
  4. S. Y. Lee, Y. W. Song, and S. P. Chang, Bulletin of KIEEME, 21, 3 (2008).
  5. J. K. Jeong, Information Display, 10, 42, (2009).
  6. E. M. C. Fortunato, L. M. N. Pereira1, P. M. C. Barquinha, A. M. B. do Rego, G. Gonçalves, A. Vilà, J. R. Morante, and R. F. P. Martins, Appl. Phys. Lett., 92, 222103 (2008). https://doi.org/10.1063/1.2937473
  7. W. F. Wu and B. S. Chiou, Thin Solid Films, 247, 201 (1994). https://doi.org/10.1016/0040-6090(94)90800-1
  8. E. Ziegler, A. Heirich, H. Oppermann, and G. Stover, Phys. Stat. Sol., A66, 635 (1981).
  9. J. S. Park, J. K. Jeong, Y. G. Mo, H. D. Kim, and C. J. Kim, Appl. Phys. Lett., 93, 033513 (2008). https://doi.org/10.1063/1.2963978
  10. J. K. Jeong, H. W. Yang, J. H. Jeong, Y .G. Mo, and H. D. Kim, Appl. Phys. Lett., 93, 123508 (2008). https://doi.org/10.1063/1.2990657
  11. E. C. Chong, K. C. Jo, and S. Y. Lee, Appl. Phys. Lett., 96, 152102 (2010). https://doi.org/10.1063/1.3387819