- Volume 25 Issue 9
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Breakdown Voltage and On-resistance Characteristics of N-channel EDMOS with Dual Work Function Gate
이중 일함수 구조를 적용한 N-채널 EDMOS 소자의 항복전압 및 온-저항 특성
- Kim, Min-Sun (School of Electronics & Information, Chungbuk Provincial College) ;
- Baek, Ki-Ju (Department of Semiconductor Engineering, Chungbuk National University) ;
- Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University) ;
- Na, Kee-Yeol (School of Electronics & Information, Chungbuk Provincial College)
- Received : 2012.07.02
- Accepted : 2012.07.17
- Published : 2012.09.01
In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance (
Supported by : 한국연구재단
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- TSUPREM-4 User's Manual (Synopsys, 2006)
- MEDICI User's Manual (Synopsys, 2006)