Breakdown Voltage and On-resistance Characteristics of N-channel EDMOS with Dual Work Function Gate

이중 일함수 구조를 적용한 N-채널 EDMOS 소자의 항복전압 및 온-저항 특성

  • Kim, Min-Sun (School of Electronics & Information, Chungbuk Provincial College) ;
  • Baek, Ki-Ju (Department of Semiconductor Engineering, Chungbuk National University) ;
  • Kim, Yeong-Seuk (Department of Semiconductor Engineering, Chungbuk National University) ;
  • Na, Kee-Yeol (School of Electronics & Information, Chungbuk Provincial College)
  • 김민선 (충북도립대학 전자정보계열) ;
  • 백기주 (충북대학교 반도체공학과) ;
  • 김영석 (충북대학교 반도체공학과) ;
  • 나기열 (충북도립대학 전자정보계열)
  • Received : 2012.07.02
  • Accepted : 2012.07.17
  • Published : 2012.09.01


In this paper, TCAD assessment of 30-V class n-channel EDMOS (extended drain metal-oxide-semiconductor) transistors with DWFG (dual work function gate) structure are described. Gate of the DWFG EDMOS transistor is composed of both p- and n-type doped region on source and drain side. Additionally, lengths of p- and n-type doped gate region are varied while keeping physical channel length. Two-dimensional device structures are generated trough TSUPREM-4 and their electrical characteristics are investigated with MEDICI. The DWFG EDMOS transistor shows improved electrical characteristics than conventional device - i.e. higher transconductance ($g_m$), better drain output current ($I_{ON}$), reduced specific on-resistances ($R_{ON}$) and higher breakdown characteristics ($BV_{DSS}$).


Supported by : 한국연구재단


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