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CharacteristicProperties of Low-k Thin Film Deposited by Sputtering

스퍼터링에 의한 Low-k 박막의 특성

  • Oh, Teresa (Division of Semiconductor, Choenju University)
  • Received : 2012.04.16
  • Accepted : 2012.07.12
  • Published : 2012.07.31

Abstract

To obtain available process at low temperature, SiOC thin film was prepared with various flow rates by using the rf magnetron sputtering, and AZO thin film was also deposited on SiOC film by rf magnetron sputtering system. The optical electrical properties of the SiOC film and SiOC/AZO were analyzed by the uv visible spectrometer and PL spectra. SiOC film on n type Si showed various type emission according to the deposition condition. The SiOC film showed the blue shift with increasing the thickness in PL spectra. AZO/SiOC/Si film had a broad emission characteristic, which is enhanced the efficiency in solar cell.

Keywords

SiOC;Sputter;Reflectance;PL spectra

Acknowledgement

Supported by : 청주대학교

References

  1. S. Fernandez, A. Martinez-Steele, J.J. Gandia, F.B. Naranjo, "Radio frequency sputter deposition of high quality conductive and transparent ZnO:Al films on polymer substrates forthin film solar cells application," Thin Solid Films, 517, 3152-3156, 2009. https://doi.org/10.1016/j.tsf.2008.11.097
  2. Min Su Kim, Kwang Gug Yim, Gae Young Leem, Soaram Kim, Giwoong Nam, Dong Yul Lee, Jin Soo Kim and Jong Su Kim, "Thickness dependence of properties of ZnO thin films on porous silicon grown by plasma assisted molecular beam epitaxy," Journal of the Korean Physical Society, 59, 2354-2361, 2011. https://doi.org/10.3938/jkps.59.2354
  3. Kyoungchul Shin, K. Prabakar, Wean-Pil Tai, Jae Hee Oh, Chongmu Lee, Dong Wha Park and Wha Swung Ahn, "The structural and photoluminescence properties of Al:ZnO/porous silicon," Journal of the Korean Physical Society, 45, 1288-1291. 2004.
  4. Tae Eun Park, Dong Chan Kim, Bo Hyun Kong and Hyung Koun Cho, "Structural and potical properties of ZnO thin films grown by RF magnetron sputtering on Si substrates," Journal of the Korean Physical Society, 45, S697-S700, 2004.
  5. T. Oh, "Organic thin film transistors using pentacene and SiOC film," IEEE transactions on Nanotechnology, Vol. 5, 23-28, 2006. https://doi.org/10.1109/TNANO.2005.858591
  6. T. Oh, and C. H. Kim, "Study on characteristic properties of annealed SiOC film prepared by inductively coupled plasma chemical vapor deposition," IEEE Trans. Plasma Science, 38, 1598-1602, 2010. https://doi.org/10.1109/TPS.2010.2049665
  7. T. Oh and H. B. Kim, "Pentacene thin film trasnsistors on PMMA treated $SiO_{2}$", Transactions on Electrical and Electronic Materials, 7(7), 639-642, 2006.
  8. Teresa Oh, "Comparision between organic thin films deposited by using CCP-CVD and ICP-CVD," J. Korean Phys. Soc. 55, 1950-1954, 2009. https://doi.org/10.3938/jkps.55.1950
  9. P. Masri, "Silicon carbide and silicon carbide- based structures: The physics of epitaxy", Surface science reports, 48, 1-20, 2002. https://doi.org/10.1016/S0167-5729(02)00099-7