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Enhancement of Solvent-Resistance by Forming Interpenetrating Network for High-Performance Polymer Field-Effect Transistors

고분자 네트워크 구조를 활용한 박막 트랜지스터의 용매안정성 향상에 관한 연구

  • Seo, Eunsuk (Department of Chemical & Biological Engineering, Hanbat National University) ;
  • Lee, Junghwi (Department of Chemical & Biological Engineering, Hanbat National University) ;
  • Min, Hong-Gi (Department of Chemical & Biological Engineering, Hanbat National University) ;
  • Lee, Hwa Sung (Department of Chemical & Biological Engineering, Hanbat National University)
  • 서은숙 (한밭대학교 화학생명공학과) ;
  • 이정휘 (한밭대학교 화학생명공학과) ;
  • 민홍기 (한밭대학교 화학생명공학과) ;
  • 이화성 (한밭대학교 화학생명공학과)
  • Received : 2012.04.30
  • Accepted : 2012.06.02
  • Published : 2012.06.30

Abstract

To enhance the solvent-resistance of polymer semiconductor film in organic field-effect transistors, bis(trichlorosily)hexane (BTH) as a cross-linkable agent was mixed with polymer semiconductors, poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-bithiophene] (F8T2) and poly(3-hexylthiophene) (P3HT). The solvent-resistance was dramatically enhanced in both the F8T2/BTH and P3HT/BTH cases, even for the 1% addition of BTH. However, clear differences in the field-effect mobilities with increasing BTH-blend ratio were observed between the F8T2 and the P3HT cases. For the F8T2-FETs, the field-effect mobility was maintained by level of 90% at the 1% BTH-blend ratio, and decreased gradually above 1% blend ratio. In contrast, the field-effect mobilities of P3HT-FETs were dramatically decreased by blending the BTH, although the solvent-resistance was increased. This obvious difference is a result of the difference in crystalline properties between the amorphous F8T2 and the crystalline P3HT. This approach to improve the solvent-resistance of polymer films provides a facile method for the enhancement of the environmental stability in response to humidity and oxygen.

Keywords

Acknowledgement

Supported by : 한밭대학교

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