Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
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Structural and Electrical Properties of Sol-gel Derived BFO/PZT Thin Films with Variation of Solvents

솔-젤법으로 제작한 BFO/PZT 박막의 용매에 따른 구조적, 전기적 특성

  • Cho, Chang-Hyun (Department of Electrical Engineering, Hanyang University) ;
  • Lee, Ju (Department of Electrical Engineering, Hanyang University)
  • 조창현 (한양대학교대학원 전기공학과) ;
  • 이주 (한양대학교대학원 전기공학과)
  • Received : 2011.10.21
  • Accepted : 2011.10.24
  • Published : 2011.11.01

Abstract

Multiferroic BFO/PZT(5/95) multilayer films were fabricated by spin-coating method on the Pt/Ti/$SiO_2$/Si substrate alternately using BFO and PZT(9/95) alkoxide solutions. The structural and dielectric properties were investigated with variation of the solvent and the number of coatings. All films showed the typical XRD patterns of the perovskite polycrystalline structure without presence of the second phase such as $Bi_2Fe_4O_3$. BFO/PZT multilayer thin films showed the typical dielectric relaxation properties with increase an applied frequency. The average thickness of 6-coated BFO/PZT multilayer film was about 600 nm. The dielectric properties such as dielectric constant, dielectric loss and remnant polarization were superior to those of single composition BFO film, and those values for BFO/PZT multilayer film were 1199, 0.23% and 12 ${\mu}C/cm^2$.

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