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Current Versus Voltage Characteristics of a Si Based 1-Diode Type Resistive Memory with Cr-SrTiO3 Films

Cr-SrTiO3 박막을 이용한 Si 기반 1D 형태 저항 변화 메모리의 전류-전압 특성 고찰

  • Song, Min-Yeong (Department of Electrical Engineering, Korea University) ;
  • Seo, Yu-Jeong (Department of Electrical Engineering, Korea University) ;
  • Kim, Yeon-Soo (Department of Physics, Konkuk University) ;
  • Kim, Hee-Dong (Department of Electrical Engineering, Korea University) ;
  • An, Ho-Myoung (Department of Electrical Engineering, Korea University) ;
  • Kim, Tae-Geun (Department of Electrical Engineering, Korea University)
  • 송민영 (고려대학교 전기전자전파공학과) ;
  • 서유정 (고려대학교 전기전자전파공학과) ;
  • 김연수 (건국대학교 물리학과) ;
  • 김희동 (고려대학교 전기전자전파공학과) ;
  • 안호명 (고려대학교 전기전자전파공학과) ;
  • 김태근 (고려대학교 전기전자전파공학과)
  • Received : 2011.07.29
  • Accepted : 2011.09.26
  • Published : 2011.11.01

Abstract

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

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