Journal of the Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회논문지)

The Korean Institute of Electrical and Electronic Material Engineers (한국전기전자재료학회)
권호 표지
DOI QR코드

DOI QR Code

Current Versus Voltage Characteristics of a Si Based 1-Diode Type Resistive Memory with Cr-SrTiO3 Films

Cr-SrTiO3 박막을 이용한 Si 기반 1D 형태 저항 변화 메모리의 전류-전압 특성 고찰

  • Song, Min-Yeong (Department of Electrical Engineering, Korea University) ;
  • Seo, Yu-Jeong (Department of Electrical Engineering, Korea University) ;
  • Kim, Yeon-Soo (Department of Physics, Konkuk University) ;
  • Kim, Hee-Dong (Department of Electrical Engineering, Korea University) ;
  • An, Ho-Myoung (Department of Electrical Engineering, Korea University) ;
  • Kim, Tae-Geun (Department of Electrical Engineering, Korea University)
  • 송민영 (고려대학교 전기전자전파공학과) ;
  • 서유정 (고려대학교 전기전자전파공학과) ;
  • 김연수 (건국대학교 물리학과) ;
  • 김희동 (고려대학교 전기전자전파공학과) ;
  • 안호명 (고려대학교 전기전자전파공학과) ;
  • 김태근 (고려대학교 전기전자전파공학과)
  • Received : 2011.07.29
  • Accepted : 2011.09.26
  • Published : 2011.11.01

Abstract

In this paper, in order to suppress unwanted current paths originating from adjacent cells in a passive crossbar array based on resistive random access memory (RRAM) without extrinsic switching devices, 1-diode type RRAM which consists of a 0.2% chromium-doped strontium titanate (Cr-$SrTiO_3$) film deposited on a silicon substrate, was proposed for high packing density, and intrinsic rectifying characteristics from the current versus voltage characteristics were successfully demonstrated.

Keywords

File

Download PDF

References

  1. Y. Shin, Symposium on VLSI Circuits D igest of Technical Papers (IEEE, Kyoto, 2005) p. 156.
  2. M. Meier, S. Gilles, R. Rosezin, C. Schindler, S. Trellenkamp, A. Rudiger, D. Mayer, C. Kugeler, and R. Waser, Microelectron. Eng., 86, 1060 (2009). https://doi.org/10.1016/j.mee.2009.01.054
  3. F. Nardi, D. Ielmini, C. Cagli, S. Spiga, M. Fanciulli, L. Goux, and D. Wouters, Solid-State Electron., 58, 42 (2011). https://doi.org/10.1016/j.sse.2010.11.031
  4. X. Chen, N. Wu, J. Strozier, and A. Ignatiev, Appl. Phys. Lett., 89, 063507 (2007).
  5. F. La Mattina, J. G. Bednorz, S. F. Alvarado, A. Shengelaya, and H. Keller, Appl. Phys. Lett., 93, 022102 (2008). https://doi.org/10.1063/1.2959059
  6. J. Hua, X. Jian, T. Lin, S.J. Liu, J. L. Sun, and J. H. Chu, Integ. Ferroelectr., 74, 189 (2005). https://doi.org/10.1080/10584580500414242
  7. N. Xu, L. Liu, X. Sun, X. Liu, D. Han, Y. Wang, R. Han, J. Kang, and B. Yu, Appl. Phys. Lett., 92, 232112 (2008). https://doi.org/10.1063/1.2945278
  8. T. Goto, Y. Cheng, Z. Fu, and L. Zhang, Advanced Materials Research, 66, 119 (2009). https://doi.org/10.4028/www.scientific.net/AMR.66.119