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Characteristics of NFGM Devices Constructed with a Single ZnO Nanowire and Al Nanoparticles

ZnO 나노선 트랜지스터를 기반으로 하는 Al 나노입자플로팅 게이트 메모리 소자의 특성

  • Kim, Sung-Su (Department of Electrical Engineering, Korea University) ;
  • Cho, Kyoung-Ah (Department of Electrical Engineering, Korea University) ;
  • Kim, Sang-Sig (Department of Electrical Engineering, Korea University)
  • 김성수 (고려대학교 전기전자전파공학부) ;
  • 조경아 (고려대학교 전기전자전파공학부) ;
  • 김상식 (고려대학교 전기전자전파공학부)
  • Received : 2011.01.17
  • Accepted : 2011.04.04
  • Published : 2011.04.01

Abstract

In this paper, nonvolatile nano-floating gate memory devices are fabricated with ZnO nanowires and Al nanoparticles on a $SiO_2/Si$ substrate. Al nanoparticles used as floating gate nodes are formed by the sputtering method. The fabricated device exhibits a threshold voltage shift of -1.5 V. In addition, we investigate the endurance and retention characteristics of the nano-floating gate memory device.

Acknowledgement

Grant : 차세대 고성능 유기나노 소재 및 프린팅 공정기술 개발

Supported by : 한국산업기술평가관리원, 서울시

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