A Study on the Optical and Electrical Properties of Ga-doped ZnO Films for Opto-electronic Devices

광전소자 응용을 위한 Ga가 첨가된 ZnO 박막의 광학적 및 전기적 특성 연구

  • Gil, Byung-Woo (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • Lee, Seong-Eui (Department of Advanced Materials Engineering, Korea Polytechnic University) ;
  • Lee, Hee-Chul (Department of Advanced Materials Engineering, Korea Polytechnic University)
  • 길병우 (한국산업기술대학교 신소재공학과) ;
  • 이성의 (한국산업기술대학교 신소재공학과) ;
  • 이희철 (한국산업기술대학교 신소재공학과)
  • Received : 2011.01.24
  • Accepted : 2011.03.27
  • Published : 2011.04.01


The Gallium-doped ZnO(GZO) film deposited at a temperature of $200^{\circ}C$ and a pressure of 10 mtorr has an optical transmittance of 89.0% and a resistivity of $2.0\;m{\Omega}{\cdot}cm$ because of its high crystallinity. Effect of $Al_2O_3$ oxide buffer layers on the optical and electrical properties of sputtered ZnO films were intensively investigated for developing the electrodes of opto-electronic devices which demanded high optical transmittance and low resistivity. The use of $Al_2O_3$ buffer layer could increase optical transmittance of GZO film to 90.7% at a wavelength of 550 nm by controlling optical spectrum. Resistivity of deposited GZO films were much dependent on the deposition condition of $O_2/(Ar+O_2)$ flow rate ratio during the buffer layer deposition. It is considered that the $Al_2O_3$ buffer layer could increase the carrier concentration of the GZO films by doping effect of diffused Al atoms through the rough interface.


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