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Effects of Sputtering Condition on Structural Properties of PZT Thin Films on LTCC Substrate by RF Magnetron Sputtering

저온동시소성세라믹 기판 위에 제작된 PZT 박막의 증착조건이 박막의 구조적 특성에 미치는 영향

  • Lee, Kyung-Chun (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hwang, Hyun-Suk (Department of Electrical Engineering, Seoil University) ;
  • Lee, Tae-Yong (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Hur, Won-Young (Department of Information and Communication Engineering, Sungkyunkwan University) ;
  • Song, Joon-Tae (Department of Information and Communication Engineering, Sungkyunkwan University)
  • 이경천 (성균관대학교 정보통신공학부) ;
  • 황현석 (서일대학교 전기공학과) ;
  • 이태용 (성균관대학교 정보통신공학부) ;
  • 허원영 (성균관대학교 정보통신공학부) ;
  • 송준태 (성균관대학교 정보통신공학부)
  • Received : 2011.03.04
  • Accepted : 2011.04.05
  • Published : 2011.04.01

Abstract

Recently, low temperature co-fired ceramic (LTCC) technology is widely used in sensors, actuators and microsystems fields because of its very good electrical and mechanical properties, high reliability and stability as well as possibility of making 3D micro structures. In this study, we investigated the effects of sputtering gas ratio and annealing temperature on the crystal structure of $Pb(ZrTi)O_3$ (PZT) thin films deposited on LTCC substrate. The LTCC substrate with thickness of $400\;{\mu}m$ were fabricated by laminating 4 green tapes which consist of alumina and glass particle in an organic binder. The PZT thin films were deposited on Pt / Ti / LTCC substrates by RF magnetron sputtering method. The results showed that the crystallization of the films were enhanced as increasing $O_2$ mixing ratio. At about 25% $O_2$ mixing ratio, was well crystallized in the perovskite structure. PZT thin films was annealed at various temperatures. When the annealing temperature is lower, the PZT thin films become a phyrochlore phase. However, when the annealing temperature is higher than $600^{\circ}C$, the PZT thin films become a perovskite phase. At the annealing temperature of $700^{\circ}C$, perovskite PZT thin films with good quality structure was obtained.

Acknowledgement

Supported by : 한국과학재단

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