The Effect of Catalytic Metal Work Functions and Interface States on the High Temperature SiC-based Gas Sensors

금속 (Pt)과 4H-SiC의 계면상태에 따른 실리콘 카바이드 기반 고온 가스센서 특성 분석

  • Jung, Ji-Chul (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 정지철 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2011.01.12
  • Accepted : 2011.03.24
  • Published : 2011.04.01


Silicon carbide (SiC)-based gas sensors can be operated at very high temperatures. So far, catalytic metal-schottky diodes respond fast to a change between a reducing and an oxidizing atmosphere. Therefore SiC diodes have been suggested for high temperature gas sensor applications. In this work, the effect of reactivity of the catalytic surface on the 4H-SiC sensor-structures in 375 K~775 K have been studied and some fundamental simulations have also been performed.


Grant : 계통연계형 인버터 시스템을 위한 고효율 전력소자 기반기술개발

Supported by : 한국연구재단


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