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N형 Ge-on-Si 기판에 형성된 Pd Germanide의 열안정성 및 Schottky 장벽 분석

Analysis of Thermal Stability and Schottky Barrier Height of Pd Germanide on N-type Ge-on-Si Substrate

  • Oh, Se-Kyung (Department of Electronics Engineering, Chungnam National University) ;
  • Shin, Hong-Sik (Department of Electronics Engineering, Chungnam National University) ;
  • Kang, Min-Ho (Department of Electronics Engineering, Chungnam National University) ;
  • Bok, Jeong-Deuk (Department of Electronics Engineering, Chungnam National University) ;
  • Jung, Yi-Jung (Department of Electronics Engineering, Chungnam National University) ;
  • Kwon, Hyuk-Min (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Ga-Won (Department of Electronics Engineering, Chungnam National University) ;
  • Lee, Hi-Deok (Department of Electronics Engineering, Chungnam National University)
  • 투고 : 2010.12.15
  • 심사 : 2011.02.07
  • 발행 : 2011.04.01

초록

In this paper, thermal stability of palladium germanide (Pd germanide) is analyzed for high performance Schottky barrier germanium metal oxide semiconductor field effect transistors (SB Ge-MOSFETs). Pd germanide Schottky barrier diodes were fabricated on n-type Ge-on-Si substrates and the formed Pd germanide shows thermal immunity up to $450^{\circ}C$. The barrier height of Pd germanide is also characterized using two methods. It is shown that Pd germanide contact has electron Schottky barrier height of 0.569~0.631 eV and work function of 4.699~4.761 eV, respectively. Pd germanide is promising for the nanoscale Schottky barrier Ge channel MOSFETs.

과제정보

연구 과제 주관 기관 : 한국과학기술재단(KOSEF)

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