Fabrication of a Au/Ni/Ti/3C-SiC Schottky Diode and its Characteristics for High-voltages

고내압용 Au/Ni/Ti/3C-SiC 쇼트키 다이오드의 제작과 그 특성

  • Received : 2010.12.20
  • Accepted : 2011.02.17
  • Published : 2011.04.01


This paper describes the fabrication and characteristics of a Au/Ni/Ti/3C-SiC Schottky diode with field plate (FP) edge termination. The Schottky contacts were annealed for 30 min at temperatures ranging from 0 to $800^{\circ}C$. At annealing temperature of $600^{\circ}C$, it showed an inhomogeneous Schottky barrier and had the best electrical characteristics. However, the annealing of $800^{\circ}C$ replaced it with ohmic behaviors because of the formation of many different types of nickel silicides. The fabricated Schottky diode had a breakdown voltage of 200 V, Schottky barrier height of 1.19 eV and worked normally even at $200^{\circ}C$.


Grant : 계통연계형 인버터 시스템을 위한 고효율 전력소자 기반기술개발


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