Effect of Methane Gases on the Properties of Diamond Thin Films Synthesized by MPCVD

MPCVD법으로 증착된 다이아몬드 박막 특성에 미치는 메탄가스의 영향

  • Song, Jin-Soo (Department of Consulting Management, SBC) ;
  • Nam, Tae-Woon (Department of Metallurgical Material Science, Hanyang University)
  • 송진수 (중소기업진흥공단 컨설팅사업처) ;
  • 남태운 (한양대학교 금속재료공학과)
  • Received : 2011.01.17
  • Accepted : 2011.02.22
  • Published : 2011.03.01


Diamond thin films were deposited on pretreated Co cemented tungsten carbide (WC-6%Co) inserts as substrate by microwave plasma chemical vapor deposition (MPCVD) system, equipped with a 915MHz, 30kW generator for generating a large-size plasma. The substrates were pretreated with two solutions Murakami solution $[KOH:K_3Fe(CN)_6:H_2O]$ and nitric solution $[HNO_3:H_2O]$ to etch, WC and Co at cemented carbide substrates, respectively. The deposition experiments were performed at an input power of 10 kW and in a total pressure of 100 torr. The influence of various $CH_4$ contents on the crystallinity and morphology of the diamond films deposited in MPCVD was investigated using scanning electron microscopy (SEM) and Raman spectroscopy. The diamond film synthesized by the $CH_4$ plasma shows a triangle-faceted (111) diamond. As $CH_4$ contents was increased, the thickness of diamond films increased and the faceted planes disappeared. Finally, Faceted diamond changed into nano-crystalline diamond with random crystallinity.


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