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Operation characteristics of IGZO thin-film transistors

IGZO 박막트랜지스터의 동작특성

  • Lee, Ho-Nyeon (Department of Electronics and Information Engineering, Soonchunhyang University) ;
  • Kim, Hyung-Jung (Department of Electronics and Information Engineering, Soonchunhyang University)
  • 이호년 (순천향대학교 전자정보공학과) ;
  • 김형중 (순천향대학교 전자정보공학과)
  • Received : 2010.01.29
  • Accepted : 2010.05.13
  • Published : 2010.05.31

Abstract

According to the increase of the channel length with fixed width/length, characteristic curves of drain current as a function of gate bias voltage of indium gallium zinc oxide (IGZO) thin-film transistors moved to a positive direction of gate voltage, and field-effect mobility decreased. In case of fixed length and width of channel, field-effect mobility was lower and subthreshold slope was larger when drain bias voltage was higher. Due to large work function of IGZO, band bending at the junction region between IGZO channel and source/drain electrodes was expected to be in opposite direction to that between silicon and metal electrodes; this could explain the above results.

Acknowledgement

Supported by : 한국과학재단

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