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Optimization of 4H-SiC DMOSFETs by Adjustment of the Dimensions and Level of the p-base Region

P형 우물 영역의 도핑 농도와 면적에 따른 4H-SiC 기반 DMOSFET 소자 구조의 최적화

  • Ahn, Jung-Joon (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Bahng, Wook (Research Center for Energy Efficient Semiconductors, Korean Electrotechnology Research Institute) ;
  • Kim, Sang-Chul (Research Center for Energy Efficient Semiconductors, Korean Electrotechnology Research Institute) ;
  • Kim, Nam-Kyun (Research Center for Energy Efficient Semiconductors, Korean Electrotechnology Research Institute) ;
  • Jung, Hong-Bae (Department of Electronic Materials Engineering, Kwangwoon University) ;
  • Koo, Sang-Mo (Department of Electronic Materials Engineering, Kwangwoon University)
  • 안정준 (광운대학교 전자재료공학과) ;
  • 방욱 (한국전기연구원 에너지반도체연구센터) ;
  • 김상철 (한국전기연구원 에너지반도체연구센터) ;
  • 김남균 (한국전기연구원 에너지반도체연구센터) ;
  • 정홍배 (광운대학교 전자재료공학과) ;
  • 구상모 (광운대학교 전자재료공학과)
  • Received : 2010.04.14
  • Accepted : 2010.06.21
  • Published : 2010.07.01

Abstract

In this work, a study is presented of the static characteristics of 4H-SiC DMOSFETs obtained by adjustment of the p-base region. The structure of this MOSFET was designed by the use of a device simulator (ATLAS, Silvaco.). The static characteristics of SiC DMOSFETs such as the blocking voltages, threshold voltages, on-resistances, and figures of merit were obtained as a function of variations in p-base doping concentration from $1\;{\times}\;10^{17}\;cm^{-3}$ to $5\;{\times}\;10^{17}\;cm^{-3}$ and doping depth from $0.5\;{\mu}m$ to $1.0\;{\mu}m$. It was found that the doping concentration and the depth of P-base region have a close relation with the blocking and threshold voltages. For that reason, silicon carbide DMOSFET structures with highly intensified blocking voltages with good figures of merit can be achieved by adjustment of the p-base depth and doping concentration.

Acknowledgement

Grant : 시스템집적반도체기반기술개발사업 (시스템 IC 2010), 계통연계형 인버터 시스템을 위한 고효율 전력소자 기반기술개발

Supported by : 산업자원부, 지식경제부

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