Fabrication and Characterization of Bi2O3-MgO-ZnO-Nb2O5 Thin Films by Pulsed Laser Deposition

펄스 레이저 증착법으로 제작된 Bi2O3-MgO-ZnO-Nb2O5 박막의 제작 및 특성 분석

  • 배기열 (동의대학교 나노공학과, 전자세라믹스센터) ;
  • 이동욱 (동의대학교 나노공학과, 전자세라믹스센터) ;
  • ;
  • 이원재 (동의대학교 나노공학과, 전자세라믹스센터) ;
  • 배윤미 (동의대학교 나노공학과, 전자세라믹스센터) ;
  • 신병철 (동의대학교 나노공학과, 전자세라믹스센터) ;
  • 윤순길 (충남대학교 나노공학부)
  • Published : 2010.03.01


Pulsed laser deposition is a very efficient technique for fabricating thin films of complex compounds. In the present work, $Bi_2O_3$-MgO-ZnO-$Nb_2O_5$ (BMZN) pyrochlore thin films were deposited on platinized Si substrates at various temperatures by using pulsed laser deposition technique. These films have been characterized by X-ray diffractometer (XRD), atomic force microscopy (AFM) to investigate their structural, morphological properties. MIM structure was manufactured to analyze di-electrical properties of BMZN thin films. XRD results reveal the thin films deposited at less than $400^{\circ}C$ show only amorphous phase, the crystallized thin films was observed when the thin films were prepared temperature at above $500^{\circ}C$. From AFM, it was known that the thin film grown at $400^{\circ}C$ is the densest. Dielectric constant increased with increasing temperature up to $400^{\circ}C$ at 100 kHz and dramatically decreased at the higher temperature. A aspect of dissipation factor was the exact opposite of dielectric constant. BMZN thin films grown at $400^{\circ}C$ exhibited a high dielectric constant of 60.9, a low dissipation factor of 0.007 at 100 kHz.


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