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Energy-band-gap Variation of InxGaN1-x Thin Films with Indium Composition

인듐량에 따른 InxGaN1-x 박막의 에너지밴드갭 변화

  • 박기철 (경상대학교 전기전자공학부 및 공학연구원) ;
  • 마대영 (경상대학교 전기전자공학부 및 공학연구원)
  • Published : 2009.08.01

Abstract

$In_xGa_{1-x}N$ alloys with 20-nm-thickness were deposited onto Mg:GaN/AlN/SiC substrates by MOCVD at $800\;^{\circ}C$. TMGa, TMIn and $NH_3$ were used as the precursor of gallium, indium and nitrogen, respectively. The mole ratio of indium in $In_xGa_{1-x}N$ films varied between 0 and 0.2. The energy-band-gaps of the films were obtained from the photoluminescence and cathodoluminescence peaks. The mole ratios of $In_xGa_{1-x}N$ films were calculated by applying Vegard's law to XRD results. The energy-band-gap versus indium composition plot for $In_xGa_{1-x}N$ alloys were well fit with a bowing parameter of 2.27.

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