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Surface Morphology and Dielectric Properties of SBN Thin Film by RF Sputtering Method

RF 스퍼터링법에 의한 SBN 박막의 표면형상 및 유전특성

  • 김진사 (조선이공대학 메카트로닉스과) ;
  • 김충혁 (광운대학교 교양학부)
  • Published : 2009.08.01

Abstract

The $Sr_{0.7}Bi_{2.3}Nb_2O_9$(SBN) thin films are deposited on Pt-coated electrode(Pt/Ti/$SiO_2$/Si) using RF sputtering method at various deposition conditions. We investigated the effect of deposition condition on the surface morphology and dielectric properties of SBN thin films. The optimum of the rougness showed about 4.33 nm in 70/30 of Ar/$O_2$ ratio. The crystallinity and rougness of SBN thin films were increased with the increase of rf power. Also, Deposition rate of SBN thin films was about 4.17 nm/min in 70 W of rf power. The capacitance of SBN thin films were increased with the increase of Ar/$O_2$ ratio, rf power and deposition temperature respectively.

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