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A Study of Surface Leakage Current of AIGaN/GaN Heterostructures

AlGaN/GaN 이종접합구조의 표면누설전류에 관한 연구

  • 석오균 (서울대학교 전기.컴퓨터공학부) ;
  • 최영환 (서울대학교 전기.컴퓨터공학부) ;
  • 임지용 (서울대학교 전기.컴퓨터공학부) ;
  • 김영실 (서울대학교 전기.컴퓨터공학부) ;
  • 김민기 (서울대학교 전기.컴퓨터공학부) ;
  • 한민구 (서울대학교 전기.컴퓨터공학부)
  • Published : 2009.08.01

Abstract

For investigation of surface leakage currrent of AlGaN/GaN heterostructures through etched GaN buffer surface and mesa wall, three kind of surface-leakage-test-patterns were fabricated. and we measured the surface leakage current of each patterns. In result of our work, the surface leakage current of pattern of which Schottky contact is formed on etched mesa wall is the largest. the leakage current through schottky contact on etched mesa wall is predominant in AlGaN/GaN heterostructures.

References

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